? semiconductor components industries, llc, 2004 september, 2004 ? rev. 5 744 publication order number: mmjt9435/d mmjt9435 preferred device bipolar power transistors pnp silicon features ? pb?free packages are available ? collector ?emitter sustaining voltage ? v ceo(sus) = 30 vdc (min) @ i c = 10 madc ? high dc current gain ? h fe = 125 (min) @ i c = 0.8 adc = 90 (min) @ i c = 3.0 adc ? low collector ?emitter saturation voltage ? v ce(sat) = 0.275 vdc (max) @ i c = 1.2 adc = 0.55 vdc (max) @ i c = 3.0 adc ? sot?223 surface mount packaging ? epoxy meets ul 94, v?0 @ 0.125 in ? esd ratings: human body model, 3b; > 8000 v machine model, c; > 400 v sot?223 case 318e style 1 marking diagram aww 9435 9435 = specific device code a = assembly location ww = work week schematic c 2,4 b 1 e 3 top view pinout c ce b 4 123 power bjt i c = 3.0 amperes bv ceo = 30 volts v ce(sat) = 0.275 volts preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 745 of this data sheet. ordering information pin assignment http://onsemi.com
mmjt9435 http://onsemi.com 745 ????????????????????????????????? ????????????????????????????????? maximum ratings (t c = 25 c unless otherwise noted) ???????????????????????? ???????????????????????? rating ???? ???? symbol ????? ????? value ??? ??? unit ???????????????????????? ???????????????????????? collector?emitter voltage ???? ???? v ceo ????? ????? 30 ??? ??? vdc ???????????????????????? ? ?????????????????????? ? ???????????????????????? collector?base voltage ???? ? ?? ? ???? v cb ????? ? ??? ? ????? 45 ??? ? ? ? ??? vdc ???????????????????????? ???????????????????????? emitter-base voltage ???? ???? v eb ????? ????? 6.0 ??? ??? vdc ???????????????????????? ???????????????????????? base current - continuous ???? ???? i b ????? ????? 1.0 ??? ??? adc ???????????????????????? ? ?????????????????????? ? ???????????????????????? collector current ? continuous collector current ? peak ???? ? ?? ? ???? i c ????? ? ??? ? ????? 3.0 5.0 ??? ? ? ? ??? adc ???????????????????????? ? ?????????????????????? ? ? ?????????????????????? ? ???????????????????????? total power dissipation @ t c = 25 c derate above 25 c total p d @ t a = 25 c mounted on 1o sq. (645 sq. mm) collector pad on fr?4 bd material to t a l p d @ t a = 25 c mounted on 0.012o sq. (7.6 sq. mm) collector pad on fr?4 bd material ???? ? ?? ? ? ?? ? ???? p d ????? ? ??? ? ? ??? ? ????? 3.0 24 1.56 0.72 ??? ? ? ? ? ? ? ??? w mw/ c w ???????????????????????? ???????????????????????? operating and storage junction temperature range ???? ???? t j , t stg ????? ????? 55 to + 150 ??? ??? c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. ????????????????????????????????? ????????????????????????????????? thermal characteristics ???????????????????????? ???????????????????????? characteristic ???? ???? symbol ????? ????? max ??? ??? unit ???????????????????????? ? ?????????????????????? ? ? ?????????????????????? ? ???????????????????????? thermal resistance, junction?to?case ? junction?to?ambient on 1o sq. (645 sq. mm) collector pad on fr?4 bd material ? junction?to?ambient on 0.012o sq. (7.6 sq. mm) collector pad on fr?4 bd material ???? ? ?? ? ? ?? ? ???? r jc r ja r ja ????? ? ??? ? ? ??? ? ????? 42 80 174 ??? ? ? ? ? ? ? ??? c/w ???????????????????????? ???????????????????????? maximum lead temperature for soldering purposes, 1/8o from case for 5 seconds ???? ???? t l ????? ????? 260 ??? ??? c ordering information device package shipping 2 mmjt9435t1 sot?223 1000 / tape & reel MMJT9435T1G sot?223 (pb?free) 1000 / tape & reel mmjt9435t3 sot?223 4000 / tape & reel mmjt9435t3g sot?223 (pb?free) 4000 / tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mmjt9435 http://onsemi.com 746 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ???????????????????? ???????????????????? characteristic ????? ????? symbol ??? ??? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ???????????????????? ? ?????????????????? ? ???????????????????? collector?emitter sustaining voltage (i c = 10 madc, i b = 0 adc) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 30 ??? ? ? ? ??? ? ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ???????????????????? ? ?????????????????? ? ???????????????????? emitter?base voltage (i e = 50 adc, i c = 0 adc) ????? ? ??? ? ????? v ebo ??? ? ? ? ??? 6.0 ??? ? ? ? ??? ? ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ???????????????????? ? ?????????????????? ? ???????????????????? collector cutoff current (v ce = 25 vdc, r be = 200 ) (v ce = 25 vdc, r be = 200 , t j = 125 c) ????? ? ??? ? ????? i cer ??? ? ? ? ??? ? ? ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 20 200 ??? ? ? ? ??? adc ???????????????????? ? ?????????????????? ? ???????????????????? emitter cutoff current (v be = 5.0 vdc) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ??? ? ? ? ??? ? ???? ? ?? ? ???? 10 ??? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ???????????????????? ? ?????????????????? ? ? ?????????????????? ? ???????????????????? collector?emitter saturation voltage (i c = 0.8 adc, i b = 20 madc) (i c = 1.2 adc, i b = 20 madc) (i c = 3.0 adc, i b = 0.3 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? ? ? ? ??? ? ? ? ? ? ? ??? 0.155 ? ? ???? ? ?? ? ? ?? ? ???? 0.210 0.275 0.550 ??? ? ? ? ? ? ? ??? vdc ???????????????????? ? ?????????????????? ? ???????????????????? base?emitter saturation voltage (i c = 3.0 adc, i b = 0.3 adc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? ? ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.25 ??? ? ? ? ??? vdc ???????????????????? ? ?????????????????? ? ???????????????????? base?emitter on voltage (i c = 1.2 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? ? ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.10 ??? ? ? ? ??? vdc ???????????????????? ? ?????????????????? ? ? ?????????????????? ? ???????????????????? dc current gain (i c = 0.8 adc, v ce = 1.0 vdc) (i c = 1.2 adc, v ce = 1.0 vdc) (i c = 3.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ??? 125 110 90 ??? ? ? ? ? ? ? ??? 220 ? ? ???? ? ?? ? ? ?? ? ???? ? ? ? ??? ? ? ? ? ? ? ??? ? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ???????????????????? ? ?????????????????? ? ???????????????????? output capacitance (v cb = 10 vdc, i e = 0 adc, f = 1.0 mhz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? ? ??? ? ? ? ??? 100 ???? ? ?? ? ???? 150 ??? ? ? ? ??? pf ???????????????????? ???????????????????? input capacitance (v eb = 8.0 vdc) ????? ????? c ib ??? ??? - ??? ??? 135 ???? ???? - ??? ??? pf ???????????????????? ? ?????????????????? ? ???????????????????? current?gain ? bandwidth product (note 4) (i c = 500 ma, v ce = 10 v, f test = 1.0 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? ? ??? ? ? ? ??? 110 ???? ? ?? ? ???? ? ??? ? ? ? ??? mhz 3. pulse test: pulse width 300 s, duty cycle 2%. 4. f t = |h fe | ? f test figure 1. collector saturation region figure 2. collector saturation region 100 1000 1.0 i b , base current (ma) 1.0 0.50 0.25 i b , base current (ma) 100 1000 1.0 0 v ce(sat) , collector-emitter voltage (v) 0 10 10 0.05 0.25 0.75 0.10 0.15 0.20 v ce(sat) , collector-emitter voltage (v) i c = 3.0 a 1.2 a 0.8 a 0.25 a 0.5 a i c = 0.25 a 1.2 a 0.8 a 0.5 a
mmjt9435 http://onsemi.com 747 figure 3. dc current gain 10 0.1 i c , collector current (a) 1000 100 10 h 1.0 , dc current gain fe figure 4. dc current gain figure 5. aono voltages 10 0.1 i c , collector current (a) 10 1.0 0.1 0.01 1.0 v, voltage (v) figure 6. aono voltages 10 0.1 i c , collector current (a) 1000 100 10 h 1.0 , dc current gain fe 10 0.1 i c , collector current (a) 1.0 0.1 0.01 1.0 v, voltage (v) v ce = 1.0 v 150 c 25 c -55 c v ce = 4.0 v 150 c 25 c -55 c i c /i b = 10 v be(sat) v ce(sat) i c /i b = 50 v be(sat) v ce(sat) figure 7. v be ( on ) voltage figure 8. output capacitance 1.0 10 0.1 i c , collector current (a) 1.2 0.8 0.4 v r , reverse voltage (volts) 10 100 0.1 v, voltage (v) capacitance (pf) 0 1.0 10 1000 100 v ce = 4.0 v 150 c 25 c -55 c c ob
mmjt9435 http://onsemi.com 748 figure 9. current?gain bandwidth product 10 0.1 i c , collector current (a) 1000 10 f 1.0 , current-gain bandwidth product t v ce , collector-emitter voltage (volts) 1.0 0.1 10 1.0 0.001 i 10 100 figure 10. active region safe operating area 0.01 0.1 , collector current (amps) c v ce = 10 v f test = 1.0 mhz t a = 25 c bonding wire limit thermal limit (single pulse) secondary breakdown limit 0.5 ms 100 ms 5.0 ms 100 figure 11. power derating 150 25 t, temperature ( c) 4.0 3.0 2.0 1.0 0 p 50 , power dissipation (watts) d 75 100 125 t a t c there are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t j(pk) = 150 c; t c is variable depending on conditions. secondary breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 12. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. d = 0.5 single pulse 0.2 0.1 0.05 0.02 0.01 figure 12. thermal response 0.01 0.1 0.0001 t, time (seconds) 1.0 0.1 0.01 r(t), effective transient thermal 0.0001 0.001 0.001 10 100 1.0 resistance (normalized) 1000 r ja (t) = r(t) ja ja = 174 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t a = p (pk) ja (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
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